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| (R) BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 o C Storage Temperature Max. Operating Junction Temperature Value 900 400 10 6 8 3 75 -65 to 200 200 Unit V V V A A A W o o C C December 2000 1/4 BU326A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 900 V V CE = 900 V V EB = 10 V I C = 100 mA 400 T c = 125 o C Min. Typ. Max. 1 2 10 Unit mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage(I B = 0) V CE(sat) V BE(sat) h FE t on ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Turn-on Time Storage Time Fall Time I C = 2.5 A IC = 4 A I C = 2.5 A IC = 4 A IC = 1 A I C = 2.5 A V CC = 250 V I C = 2.5 A I B2 = -1A A I C = 2.5 A I B2 = -1A A I B = 0.5 A I B = 1.25 A I B = 0.5 A I B = 1.25 A V CE = 5 V IB1 = 0.5 A IB1 = 0.5 A V CC = 250 V IB1 = 0.5 A V CC = 250 V 25 1.5 3 1.4 1.6 V V V 0.5 s 3.5 0.5 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BU326A TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BU326A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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